Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V<sub>t</sub> Ni-FUSI CMOS transistors.

A. Rothschild R. Mitsuhashi C. Kerner X. Shi J. L. Everaert L. Date Thierry Conard Olivier Richard C. Vrancken R. Verbeeck Anabela Veloso A. Lauwers M. de Potter de ten Broeck I. Debusschere M. Jurczak M. Niwa P. Absil S. Biesemans Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V<sub>t</sub> Ni-FUSI CMOS transistors. 521-524 2007 47 Microelectronics Reliability 4-5 http://dx.doi.org/10.1016/j.microrel.2007.01.042 db/journals/mr/mr47.html#RothschildMKSEDCRVVVLBDJNAB07