Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.

M. Porti M. Nafría X. Aymerich Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. 1501-1505 2003 43 Microelectronics Reliability 9-11 http://dx.doi.org/10.1016/S0026-2714(03)00266-X db/journals/mr/mr43.html#PortiNA03