Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing.

K. L. Ng Nian Zhan Chi-Wah Kok M. C. Poon Hei Wong Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. 1289-1293 2003 43 Microelectronics Reliability 8 http://dx.doi.org/10.1016/S0026-2714(03)00141-0 db/journals/mr/mr43.html#NgZKPW03