Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors.

Ling Lv J. G. Ma Y. R. Cao J. C. Zhang W. Zhang L. Li S. R. Xu X. H. Ma X. T. Ren Y. Hao Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. 2168-2172 2011 51 Microelectronics Reliability 12 http://dx.doi.org/10.1016/j.microrel.2011.04.022 db/journals/mr/mr51.html#LvMCZZLXMRH11