Total-dose-induced edge effect in SOI NMOS transistors with different layouts.

Jie Liu Jicheng Zhou Hongwei Luo Xuedong Kong Yunfei En Qian Shi Yujuan He Total-dose-induced edge effect in SOI NMOS transistors with different layouts. 45-47 2010 50 Microelectronics Reliability 1 http://dx.doi.org/10.1016/j.microrel.2009.09.003 db/journals/mr/mr50.html#LiuZLKESH10