<?xml version="1.0"?>
<dblp>
<article key="journals/mr/LiSPSCSAAEBDNLGM07" mdate="2013-05-07">
<author>Z. Li</author>
<author>Tom Schram</author>
<author>Luigi Pantisano</author>
<author>A. Stesmans</author>
<author>Thierry Conard</author>
<author>S. Shamuilia</author>
<author>V. V. Afanasiev</author>
<author>A. Akheyar</author>
<author>Sven Van Elshocht</author>
<author>D. P. Brunco</author>
<author>W. Deweerd</author>
<author>Y. Naoki</author>
<author>P. Lehnen</author>
<author>Stefan De Gendt</author>
<author>Kristin De Meyer</author>
<title>Mechanism of O<sub>2</sub>-anneal induced V<sub>fb</sub> shifts of Ru gated stacks.</title>
<pages>518-520</pages>
<year>2007</year>
<volume>47</volume>
<journal>Microelectronics Reliability</journal>
<number>4-5</number>
<ee>http://dx.doi.org/10.1016/j.microrel.2007.01.054</ee>
<url>db/journals/mr/mr47.html#LiSPSCSAAEBDNLGM07</url>
</article>
</dblp>
