Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements.

Hyuck In Kwon In Man Kang Byung-Gook Park Jong Duk Lee Sang Sik Park Jung Chak Ahn Yong Hee Lee Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements. 47-51 2004 44 Microelectronics Reliability 1 http://dx.doi.org/10.1016/S0026-2714(03)00161-6 db/journals/mr/mr44.html#KwonKPLPAL04