Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design.

Sudip Ghosh Brice Grandchamp G. A. Koné François Marc C. Maneux Thomas Zimmer Virginie Nodjiadjim Muriel Riet Jean-Yves Dupuy Jean Godin Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design. 1736-1741 2011 51 Microelectronics Reliability 9-11 http://dx.doi.org/10.1016/j.microrel.2011.07.045 db/journals/mr/mr51.html#GhoshGKMMZNRDG11