Tiemin Zhang Guoqing Miao Yixin Jin Jianchun Xie Hong Jiang Zhiming Li Hang Song Effect of In content of the buffer layer on crystalline quality and electrical property of In<sub>0.82</sub>Ga<sub>0.18</sub>As/InP grown by LP-MOCVD. 398-400 2007 38 Microelectronics Journal 3 http://dx.doi.org/10.1016/j.mejo.2007.01.015 db/journals/mj/mj38.html#ZhangMJXJLS07