<?xml version="1.0"?>
<dblp>
<article key="journals/mj/WangWHWMXWRL07" mdate="2008-01-25">
<author>Xiaoyan Wang</author>
<author>Xiaoliang Wang</author>
<author>Guoxin Hu</author>
<author>Baozhu Wang</author>
<author>Zhiyong Ma</author>
<author>Hongling Xiao</author>
<author>Cuimei Wang</author>
<author>Junxue Ran</author>
<author>Jianping Li</author>
<title>Characteristics of high Al content Al<sub>x</sub>Ga<sub>1-x</sub>N grown by metalorganic chemical vapor deposition.</title>
<pages>838-841</pages>
<year>2007</year>
<volume>38</volume>
<journal>Microelectronics Journal</journal>
<number>8-9</number>
<ee>http://dx.doi.org/10.1016/j.mejo.2007.07.090</ee>
<url>db/journals/mj/mj38.html#WangWHWMXWRL07</url>
</article>
</dblp>
