High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process.

P. M. Santos Vitor Costa M. C. Gomes Beatriz Borges Mário Lança High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process. 35-40 2007 38 Microelectronics Journal 1 http://dx.doi.org/10.1016/j.mejo.2006.09.015 db/journals/mj/mj38.html#SantosCGBL07