<?xml version="1.0"?>
<dblp>
<article key="journals/mj/LiaoDLTQLFC06" mdate="2007-03-25">
<author>Feifei Liao</author>
<author>Yiqing Ding</author>
<author>Yinyin Lin</author>
<author>Tingao Tang</author>
<author>Baowei Qiao</author>
<author>Yunfeng Lai</author>
<author>Jie Feng</author>
<author>Bomy Chen</author>
<title>Characterization of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin film transistor and its application in non-volatile memory.</title>
<pages>841-844</pages>
<year>2006</year>
<volume>37</volume>
<journal>Microelectronics Journal</journal>
<number>8</number>
<ee>http://dx.doi.org/10.1016/j.mejo.2005.10.007</ee>
<url>db/journals/mj/mj37.html#LiaoDLTQLFC06</url>
</article>
</dblp>
