<?xml version="1.0"?>
<dblp>
<article key="journals/mj/DanylyukVPBATSVE03" mdate="2012-09-26">
<author>S. V. Danylyuk</author>
<author>S. A. Vitusevich</author>
<author>B. Podor</author>
<author>A. E. Belyaev</author>
<author>A. Yu. Avksentyev</author>
<author>Vinayak Tilak</author>
<author>Joseph Smart</author>
<author>Alexei Vertiatchikh</author>
<author>Lester F. Eastman</author>
<title>The investigation of properties of electron transport in AlGaN/GaN heterostructures.</title>
<pages>575-577</pages>
<year>2003</year>
<volume>34</volume>
<journal>Microelectronics Journal</journal>
<number>5-8</number>
<ee>http://dx.doi.org/10.1016/S0026-2692(03)00052-1</ee>
<url>db/journals/mj/mj34.html#DanylyukVPBATSVE03</url>
</article>
</dblp>
