Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes.

Francesco G. Della Corte Fortunato Pezzimenti Roberta Nipoti Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes. 1273-1279 2007 38 Microelectronics Journal 12 http://dx.doi.org/10.1016/j.mejo.2007.09.024 db/journals/mj/mj38.html#CortePN07