@article{DBLP:journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12,
  author    = {Koichi Fukuda and
               Yoshihisa Watanabe and
               Eiichi Makino and
               Koichi Kawakami and
               Jumpei Sato and
               Teruo Takagiwa and
               Naoaki Kanagawa and
               Hitoshi Shiga and
               Naoya Tokiwa and
               Yoshihiko Shindo and
               Takeshi Ogawa and
               Toshiaki Edahiro and
               Makoto Iwai and
               Osamu Nagao and
               Junji Musha and
               Takatoshi Minamoto and
               Yuka Furuta and
               Kosuke Yanagidaira and
               Yuya Suzuki and
               Dai Nakamura and
               Yoshikazu Hosomura and
               Rieko Tanaka and
               Hiromitsu Komai and
               Mai Muramoto and
               Go Shikata and
               Ayako Yuminaka and
               Kiyofumi Sakurai and
               Manabu Sakai and
               Hong Ding and
               Mitsuyuki Watanabe and
               Yosuke Kato and
               Toru Miwa and
               Alex Mak and
               Masaru Nakamichi and
               Gertjan Hemink and
               Dana Lee and
               Masaaki Higashitani and
               Brian Murphy and
               Bo Lei and
               Yasuhiko Matsunaga and
               Kiyomi Naruke and
               Takahiko Hara},
  title     = {A 151-mm$^{\mbox{2}}$ 64-Gb 2 Bit/Cell NAND Flash Memory in
               24-nm CMOS Technology},
  journal   = {J. Solid-State Circuits},
  volume    = {47},
  number    = {1},
  year      = {2012},
  pages     = {75-84},
  ee        = {http://dx.doi.org/10.1109/JSSC.2011.2164711},
  bibsource = {DBLP, http://dblp.uni-trier.de}
}