BibTeX record journals/iet-cds/WangXW19

download as .bib file

@article{DBLP:journals/iet-cds/WangXW19,
  author       = {Xiaoyan Wang and
                  Xiaobo Xu and
                  Huifeng Wang},
  title        = {Analytical model for uniaxial strained Si inversion layer electron
                  effective mobility},
  journal      = {{IET} Circuits Devices Syst.},
  volume       = {13},
  number       = {3},
  pages        = {414--419},
  year         = {2019},
  url          = {https://doi.org/10.1049/iet-cds.2018.5170},
  doi          = {10.1049/IET-CDS.2018.5170},
  timestamp    = {Thu, 10 Sep 2020 14:36:30 +0200},
  biburl       = {https://dblp.org/rec/journals/iet-cds/WangXW19.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
a service of  Schloss Dagstuhl - Leibniz Center for Informatics

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.