<?xml version="1.0"?>
<dblp>
<article key="journals/ieicet/YamadaSANMK08" mdate="2009-06-24">
<author>Kenta Yamada</author>
<author>Takashi Sato</author>
<author>Shuhei Amakawa</author>
<author>Noriaki Nakayama</author>
<author>Kazuya Masu</author>
<author>Shigetaka Kumashiro</author>
<title>Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress.</title>
<pages>1142-1150</pages>
<year>2008</year>
<volume>91-C</volume>
<journal>IEICE Transactions</journal>
<number>7</number>
<ee>http://dx.doi.org/10.1093/ietele/e91-c.7.1142</ee>
<url>db/journals/ieicet/ieicet91c.html#YamadaSANMK08</url>
</article>
</dblp>
