FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction.

Shin-ichi O'Uchi Meishoku Masahara Kazuhiko Endo Yongxun Liu Takashi Matsukawa Kunihiro Sakamoto Toshihiro Sekigawa Hanpei Koike Eiichi Suzuki FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. 534-542 2008 91-C IEICE Transactions 4 http://dx.doi.org/10.1093/ietele/e91-c.4.534 db/journals/ieicet/ieicet91c.html#OUchiMELMSSKS08