A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential.

Dondee Navarro Takeshi Mizoguchi Masami Suetake Kazuya Hisamitsu Hiroaki Ueno Mitiko Miura-Mattausch Hans Jürgen Mattausch Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. 1079-1086 2005 88-C IEICE Transactions 5 http://dx.doi.org/10.1093/ietele/e88-c.5.1079 db/journals/ieicet/ieicet88c.html#NavarroMSHUMMKYYN05