1/<i>f</i>-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation.

Shizunori Matsumoto Hiroaki Ueno Satoshi Hosokawa Toshihiko Kitamura Mitiko Miura-Mattausch Hans Jürgen Mattausch Tatsuya Ohguro Shigetaka Kumashiro Tetsuya Yamaguchi Kyoji Yamashita Noriaki Nakayama 1/<i>f</i>-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. 247-254 2005 88-C IEICE Transactions 2 http://dx.doi.org/10.1093/ietele/E88-C.2.247 db/journals/ieicet/ieicet88c.html#MatsumotoUHKMMOKYYN05