BibTeX record journals/ieicet/HirokiMS10

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@article{DBLP:journals/ieicet/HirokiMS10,
  author       = {Masanobu Hiroki and
                  Narihiko Maeda and
                  Naoteru Shigekawa},
  title        = {Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN
                  Heterostructures FETs on the AlN Interlayer Thickness},
  journal      = {{IEICE} Trans. Electron.},
  volume       = {93-C},
  number       = {5},
  pages        = {579--584},
  year         = {2010},
  url          = {https://doi.org/10.1587/transele.E93.C.579},
  doi          = {10.1587/TRANSELE.E93.C.579},
  timestamp    = {Sat, 11 Apr 2020 14:48:26 +0200},
  biburl       = {https://dblp.org/rec/journals/ieicet/HirokiMS10.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}