<?xml version="1.0"?>
<dblp>
<article key="journals/ieicet/AbeNPFSAL06" mdate="2008-01-24">
<author>Masayuki Abe</author>
<author>Hiroyuki Nagasawa</author>
<author>Stefan Potthast</author>
<author>Jara Fernandez</author>
<author>J&#246;rg Sch&#246;rmann</author>
<author>Donat Josef As</author>
<author>Klaus Lischka</author>
<title>Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation.</title>
<pages>1057-1063</pages>
<year>2006</year>
<volume>89-C</volume>
<journal>IEICE Transactions</journal>
<number>7</number>
<ee>http://dx.doi.org/10.1093/ietele/e89-c.7.1057</ee>
<url>db/journals/ieicet/ieicet89c.html#AbeNPFSAL06</url>
</article>
</dblp>
