![](https://dblp.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
default search action
BibTeX record journals/ieiceee/SanoO11
@article{DBLP:journals/ieiceee/SanoO11, author = {Takahiro Sano and Shun'ichiro Ohmi}, title = {Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations}, journal = {{IEICE} Electron. Express}, volume = {8}, number = {18}, pages = {1492--1497}, year = {2011}, url = {https://doi.org/10.1587/elex.8.1492}, doi = {10.1587/ELEX.8.1492}, timestamp = {Fri, 12 Feb 2021 22:20:22 +0100}, biburl = {https://dblp.org/rec/journals/ieiceee/SanoO11.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
![](https://dblp.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.