<?xml version="1.0"?>
<dblp>
<article key="journals/ibmrd/KoteckiBSLSLSACDGKPWW99" mdate="2008-08-13">
<author>David E. Kotecki</author>
<author>John D. Baniecki</author>
<author>Hua Shen</author>
<author>Robert B. Laibowitz</author>
<author>Katherine L. Saenger</author>
<author>Jingyu Jenny Lian</author>
<author>Thomas M. Shaw</author>
<author>Satish D. Athavale</author>
<author>Cyril Cabral Jr.</author>
<author>Peter R. Duncombe</author>
<author>Martin Gutsche</author>
<author>Gerhard Kunkel</author>
<author>Young-Jin Park</author>
<author>Yun-Yu Wang</author>
<author>Richard Wise</author>
<title>(Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM.</title>
<pages>367-382</pages>
<year>1999</year>
<volume>43</volume>
<journal>IBM Journal of Research and Development</journal>
<number>3</number>
<ee>http://dx.doi.org/10.1147/rd.433.0367</ee>
<url>db/journals/ibmrd/ibmrd43.html#KoteckiBSLSLSACDGKPWW99</url>
</article>
</dblp>
