@article{DBLP:journals/ibmrd/KargMBRSJLJSLAWSDC08,
author = {Siegfried F. Karg and
Gerhard Ingmar Meijer and
J. Georg Bednorz and
Charles T. Rettner and
Alejandro G. Schrott and
Eric A. Joseph and
Chung Hon Lam and
Markus Janousch and
Urs Staub and
Fabio LaMattina and
Santos F. Alvarado and
Daniel Widmer and
Richard Stutz and
Ute Drechsler and
Daniele Caimi},
title = {Transition-metal-oxide-based resistance-change memories},
journal = {IBM Journal of Research and Development},
volume = {52},
number = {4-5},
year = {2008},
pages = {481-492},
ee = {http://dx.doi.org/10.1147/rd.524.0481},
bibsource = {DBLP, http://dblp.uni-trier.de}
}
Last update 2009-06-10 CET by the DBLP Team — 
Data released under the ODC-BY 1.0 license — See also our legal information page
