Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations.

Terence B. Hook Jay S. Burnham Ronald J. Bolam Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations. 393-406 1999 43 IBM Journal of Research and Development 3 http://dx.doi.org/10.1147/rd.433.0393 db/journals/ibmrd/ibmrd43.html#HookBB99