<?xml version="1.0"?>
<dblp>
<article key="journals/chinaf/ChenLCHZCCGLWa11" mdate="2011-08-08">
<author>Frederick T. Chen</author>
<author>Heng-Yuan Lee</author>
<author>Yu-Sheng Chen</author>
<author>Yenya Hsu</author>
<author>Lijie Zhang</author>
<author>Pang-Shiu Chen</author>
<author>Weisu Chen</author>
<author>Peiyi Gu</author>
<author>Wenhsing Liu</author>
<author>Sumin Wang</author>
<author>Chen-Han Tsai</author>
<author>Shyh-Shyuan Sheu</author>
<author>Ming-Jinn Tsai</author>
<author>Ru Huang</author>
<title>Resistance switching for RRAM applications.</title>
<pages>1073-1086</pages>
<year>2011</year>
<volume>54</volume>
<journal>SCIENCE CHINA Information Sciences</journal>
<number>5</number>
<ee>http://dx.doi.org/10.1007/s11432-011-4217-8</ee>
<url>db/journals/chinaf/chinaf54.html#ChenLCHZCCGLWa11</url>
</article>
</dblp>
