Improved empirical DC I-V model for 4H-SiC MESFETs.

QuanJun Cao YiMen Zhang YuMing Zhang HongLiang Lv YueHu Wang XiaoYan Tang Hui Guo Improved empirical DC I-V model for 4H-SiC MESFETs. 1184-1192 2008 51 Science in China Series F: Information Sciences 8 http://dx.doi.org/10.1007/s11432-008-0037-x db/journals/chinaf/chinaf51.html#CaoZZLWTG08