BibTeX record journals/access/SameshimaNSH20

download as .bib file

@article{DBLP:journals/access/SameshimaNSH20,
  author       = {Toshiyuki Sameshima and
                  Tomokazu Nagao and
                  Erika Sekiguchi and
                  Masahiko Hasumi},
  title        = {Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon
                  at Low Temperatures},
  journal      = {{IEEE} Access},
  volume       = {8},
  pages        = {72598--72606},
  year         = {2020},
  url          = {https://doi.org/10.1109/ACCESS.2020.2987825},
  doi          = {10.1109/ACCESS.2020.2987825},
  timestamp    = {Tue, 16 Jun 2020 17:15:11 +0200},
  biburl       = {https://dblp.org/rec/journals/access/SameshimaNSH20.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
a service of  Schloss Dagstuhl - Leibniz Center for Informatics

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.