BibTeX record conf/vlsit/LiaoHLTLLHWCRTC22

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@inproceedings{DBLP:conf/vlsit/LiaoHLTLLHWCRTC22,
  author       = {C.{-}Y. Liao and
                  K.{-}Y. Hsiang and
                  Z.{-}F. Lou and
                  H.{-}C. Tseng and
                  C.{-}Y. Lin and
                  Z.{-}X. Li and
                  F.{-}C. Hsieh and
                  C. C. Wang and
                  F.{-}S. Chang and
                  W.{-}C. Ray and
                  Y.{-}Y. Tseng and
                  Shu{-}Tong Chang and
                  T. C. Chen and
                  Min{-}Hung Lee},
  title        = {Endurance {\textgreater} 10\({}^{\mbox{11}}\) Cycling of 3D {GAA}
                  Nanosheet Ferroelectric {FET} with Stacked HfZrO2 to Homogenize Corner
                  Field Toward Mitigate Dead Zone for High-Density eNVM},
  booktitle    = {{IEEE} Symposium on {VLSI} Technology and Circuits {(VLSI} Technology
                  and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
  pages        = {1--2},
  publisher    = {{IEEE}},
  year         = {2022},
  url          = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345},
  doi          = {10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830345},
  timestamp    = {Sun, 12 Nov 2023 02:16:13 +0100},
  biburl       = {https://dblp.org/rec/conf/vlsit/LiaoHLTLLHWCRTC22.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}