BibTeX record conf/vlsit/HanSBGKZ23

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@inproceedings{DBLP:conf/vlsit/HanSBGKZ23,
  author       = {Yi Han and
                  Jingxuan Sun and
                  Jin Hee Bae and
                  Detlev Gr{\"{u}}tzmacher and
                  Joachim Knoch and
                  Qing{-}Tai Zhao},
  title        = {High Performance 5 nm Si Nanowire FETs with a Record Small {SS} =
                  2.3 mV/dec and High Transconductance at 5.5 {K} Enabled by Dopant
                  Segregated Silicide Source/Drain},
  booktitle    = {2023 {IEEE} Symposium on {VLSI} Technology and Circuits {(VLSI} Technology
                  and Circuits), Kyoto, Japan, June 11-16, 2023},
  pages        = {1--2},
  publisher    = {{IEEE}},
  year         = {2023},
  url          = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185373},
  doi          = {10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185373},
  timestamp    = {Fri, 28 Jul 2023 11:11:24 +0200},
  biburl       = {https://dblp.org/rec/conf/vlsit/HanSBGKZ23.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}