Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective.

Elias Kougianos Saraju P. Mohanty Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective. 195-200 2007 conf/vlsid/2007 VLSI Design http://doi.ieeecomputersociety.org/10.1109/VLSID.2007.107 db/conf/vlsid/vlsid2007.html#KougianosM07