BibTeX record conf/vdat/SharmaABGWD16

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@inproceedings{DBLP:conf/vdat/SharmaABGWD16,
  author       = {Pulkit Sharma and
                  R. Anusha and
                  K. Bharath and
                  Jasmine Kaur Gulati and
                  Preet K. Walia and
                  Sumit Jagdish Darak},
  title        = {Quantification of figures of merit of 7T and 8T {SRAM} cells in subthreshold
                  region and their comparison with the conventional 6T {SRAM} cell},
  booktitle    = {20th International Symposium on {VLSI} Design and Test, {VDAT} 2016,
                  Guwahati, India, May 24-27, 2016},
  pages        = {1--2},
  publisher    = {{IEEE}},
  year         = {2016},
  url          = {https://doi.org/10.1109/ISVDAT.2016.8064899},
  doi          = {10.1109/ISVDAT.2016.8064899},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/vdat/SharmaABGWD16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}