Low power 8T SRAM using 32nm independent gate FinFET technology.

Young Bok Kim Yong-Bin Kim Fabrizio Lombardi Low power 8T SRAM using 32nm independent gate FinFET technology. 247-250 2008 SoCC http://dx.doi.org/10.1109/SOCC.2008.4641521 conf/socc/2008 db/conf/socc/socc2008.html#KimKL08