<?xml version="1.0"?>
<dblp>
<inproceedings key="conf/isvlsi/OhbaMMYTUF06" mdate="2007-01-08">
<author>Ryuji Ohba</author>
<author>Daisuke Matsushita</author>
<author>Koichi Muraoka</author>
<author>Shinichi Yasuda</author>
<author>Tetsufumi Tanamoto</author>
<author>Ken Uchida</author>
<author>Shinobu Fujita</author>
<title>Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation.</title>
<pages>231-236</pages>
<year>2006</year>
<crossref>conf/isvlsi/2006</crossref>
<booktitle>ISVLSI</booktitle>
<ee>http://doi.ieeecomputersociety.org/10.1109/ISVLSI.2006.83</ee>
<url>db/conf/isvlsi/isvlsi2006.html#OhbaMMYTUF06</url>
</inproceedings>
</dblp>
