@inproceedings{DBLP:conf/isscc/FutatsuyamaFTSEKNIKFKAMHHLCHSDTSKKSYSNFMNLMLMWHO09,
author = {Takuya Futatsuyama and
Norihiro Fujita and
Naoya Tokiwa and
Yoshihiko Shindo and
Toshiaki Edahiro and
Teruhiko Kamei and
Hiroaki Nasu and
Makoto Iwai and
Koji Kato and
Yasuyuki Fukuda and
Naoaki Kanagawa and
Naofumi Abiko and
Masahide Matsumoto and
Toshihiko Himeno and
Toshifumi Hashimoto and
Yi-Ching Liu and
Hardwell Chibvongodze and
Takamitsu Hori and
Manabu Sakai and
Hong Ding and
Yoshiharu Takeuchi and
Hitoshi Shiga and
Norifumi Kajimura and
Yasuyuki Kajitani and
Kiyofumi Sakurai and
Kosuke Yanagidaira and
Toshihiro Suzuki and
Yuko Namiki and
Tomofumi Fujimura and
Man Mui and
Hao Nguyen and
Seungpil Lee and
Alex Mak and
Jeffery Lutze and
Tooru Maruyama and
Toshiharu Watanabe and
Takahiko Hara and
Shigeo Ohshima},
title = {A 113mm2 32Gb 3b/cell NAND flash memory},
booktitle = {ISSCC},
year = {2009},
pages = {242-243},
ee = {http://dx.doi.org/10.1109/ISSCC.2009.4977398},
crossref = {DBLP:conf/isscc/2009},
bibsource = {DBLP, http://dblp.uni-trier.de}
}
@proceedings{DBLP:conf/isscc/2009,
title = {IEEE International Solid-State Circuits Conference, ISSCC
2009, Digest of Technical Papers, San Francisco, CA, USA,
8-12 February, 2009},
booktitle = {ISSCC},
publisher = {IEEE},
year = {2009},
isbn = {978-1-4244-3458-9},
ee = {http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4926119},
bibsource = {DBLP, http://dblp.uni-trier.de}
}