An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport.

Lining Zhang Jin He Jian Zhang Feng Liu Yue Fu Yan Song Xing Zhang An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport. 582-587 2009 ISQED http://dx.doi.org/10.1109/ISQED.2009.4810359 conf/isqed/2009 db/conf/isqed/isqed2009.html#ZhangHZLFSZ09