A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.

Chenyue Ma Bo Li Lining Zhang Jin He Xing Zhang Xinnan Lin Mansun Chan A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. 7-12 2009 ISQED http://dx.doi.org/10.1109/ISQED.2009.4810262 conf/isqed/2009 db/conf/isqed/isqed2009.html#MaLZHZLC09