BibTeX
@inproceedings{DBLP:conf/isqed/MaLZHZLC09,
author = {Chenyue Ma and
Bo Li and
Lining Zhang and
Jin He and
Xing Zhang and
Xinnan Lin and
Mansun Chan},
title = {A unified FinFET reliability model including high K gate
stack dynamic threshold voltage, hot carrier injection,
and negative bias temperature instability},
booktitle = {ISQED},
year = {2009},
pages = {7-12},
ee = {http://dx.doi.org/10.1109/ISQED.2009.4810262},
crossref = {DBLP:conf/isqed/2009},
bibsource = {DBLP, http://dblp.uni-trier.de}
}
@proceedings{DBLP:conf/isqed/2009,
title = {10th International Symposium on Quality of Electronic Design
(ISQED 2009), 16-18 March 2009, San Jose, CA, USA},
booktitle = {ISQED},
publisher = {IEEE},
year = {2009},
bibsource = {DBLP, http://dblp.uni-trier.de}
}
Copyright © 2009-04-20 by Michael Ley (ley@uni-trier.de)