Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations.

Zhiyu Liu Sherif A. Tawfik Volkan Kursun Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations. 305-310 2008 ISQED http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.97 conf/isqed/2008 db/conf/isqed/isqed2008.html#LiuTK08