Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes.

Feng Liu Jin He Yue Fu Jinhua Hu Wei Bian Yan Song Xing Zhang Mansun Chan Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. 271-276 2008 ISQED http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.34 conf/isqed/2008 db/conf/isqed/isqed2008.html#LiuHFHBSZC08