<?xml version="1.0"?>
<dblp>
<inproceedings key="conf/isqed/KanjJSKANMN07" mdate="2007-07-25">
<author>Rouwaida Kanj</author>
<author>Rajiv V. Joshi</author>
<author>Jayakumaran Sivagnaname</author>
<author>Jente B. Kuang</author>
<author>Dhruva Acharyya</author>
<author>Tuyet Nguyen</author>
<author>Chandler McDowell</author>
<author>Sani R. Nassif</author>
<title>Gate Leakage Effects on Yield and Design Considerations of PD/SOI SRAM Designs.</title>
<pages>33-40</pages>
<year>2007</year>
<crossref>conf/isqed/2007</crossref>
<booktitle>ISQED</booktitle>
<ee>http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.83</ee>
<url>db/conf/isqed/isqed2007.html#KanjJSKANMN07</url>
</inproceedings>
</dblp>
