BibTeX record conf/irps/RuzzarinMSMZSP18

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@inproceedings{DBLP:conf/irps/RuzzarinMSMZSP18,
  author       = {Maria Ruzzarin and
                  Matteo Meneghini and
                  Carlo De Santi and
                  Gaudenzio Meneghesso and
                  Enrico Zanoni and
                  Min Sun and
                  Tom{\'{a}}s Palacios},
  title        = {Degradation of vertical GaN FETs under gate and drain stress},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2018, Burlingame,
                  CA, USA, March 11-15, 2018},
  pages        = {4},
  publisher    = {{IEEE}},
  year         = {2018},
  url          = {https://doi.org/10.1109/IRPS.2018.8353579},
  doi          = {10.1109/IRPS.2018.8353579},
  timestamp    = {Tue, 07 May 2024 20:11:34 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/RuzzarinMSMZSP18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}