BibTeX record conf/iecon/TengGZKX20

download as .bib file

@inproceedings{DBLP:conf/iecon/TengGZKX20,
  author       = {Yongxiao Teng and
                  Qiang Gao and
                  Qian Zhang and
                  Jiabao Kou and
                  Dianguo Xu},
  title        = {A Variable Gate Resistance SiC {MOSFET} Drive Circuit},
  booktitle    = {The 46th Annual Conference of the {IEEE} Industrial Electronics Society,
                  {IECON} 2020, Singapore, October 18-21, 2020},
  pages        = {2683--2688},
  publisher    = {{IEEE}},
  year         = {2020},
  url          = {https://doi.org/10.1109/IECON43393.2020.9254632},
  doi          = {10.1109/IECON43393.2020.9254632},
  timestamp    = {Fri, 29 Jan 2021 11:26:26 +0100},
  biburl       = {https://dblp.org/rec/conf/iecon/TengGZKX20.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
a service of  Schloss Dagstuhl - Leibniz Center for Informatics

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.