Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications.

Patrick Fay Gary H. Bernstein David H. Chow J. Schulman Pinaki Mazumder W. Williamson B. K. Gilbert Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. 162-165 1999 conf/glvlsi/1999 Great Lakes Symposium on VLSI http://csdl.computer.org/comp/proceedings/glsvlsi/1999/0104/00/01040162abs.htm db/conf/glvlsi/glvlsi1999.html#FayBCSMWG99