Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories.

O. Ginez Jean Michel Daga Patrick Girard Christian Landrault Serge Pravossoudovitch Arnaud Virazel Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories. 77-84 2007 conf/ets/2007 European Test Symposium http://doi.ieeecomputersociety.org/10.1109/ETS.2007.20 db/conf/ets/ets2007.html#GinezDGLPV07