BibTeX record conf/essderc/KawanagoKKNSWTNI13

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@inproceedings{DBLP:conf/essderc/KawanagoKKNSWTNI13,
  author       = {Takamasa Kawanago and
                  Kuniyuki Kakushima and
                  Yoshinori Kataoka and
                  Akira Nishiyama and
                  Nobuyuki Sugii and
                  Hitoshi Wakabayashi and
                  Kazuo Tsutsui and
                  Kenji Natori and
                  Hiroshi Iwai},
  title        = {Advantage of TiN Schottky gate over conventional Ni for improved electrical
                  characteristics in AlGaN/GaN {HEMT}},
  booktitle    = {Proceedings of the European Solid-State Device Research Conference,
                  {ESSDERC} 2013, Bucharest, Romania, September 16-20, 2013},
  pages        = {107--110},
  publisher    = {{IEEE}},
  year         = {2013},
  url          = {https://doi.org/10.1109/ESSDERC.2013.6818830},
  doi          = {10.1109/ESSDERC.2013.6818830},
  timestamp    = {Thu, 14 Oct 2021 10:04:33 +0200},
  biburl       = {https://dblp.org/rec/conf/essderc/KawanagoKKNSWTNI13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}