BibTeX record conf/essderc/JangBYMKCRDM13

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@inproceedings{DBLP:conf/essderc/JangBYMKCRDM13,
  author       = {Doyoung Jang and
                  Marie Garcia Bardon and
                  Dmitry Yakimets and
                  Kenichi Miyaguchi and
                  An De Keersgieter and
                  Thomas Chiarella and
                  Romain Ritzenthaler and
                  Morin Dehan and
                  Abdelkarim Mercha},
  title        = {{STI} and eSiGe source/drain epitaxy induced stress modeling in 28
                  nm technology with replacement gate {(RMG)} process},
  booktitle    = {Proceedings of the European Solid-State Device Research Conference,
                  {ESSDERC} 2013, Bucharest, Romania, September 16-20, 2013},
  pages        = {159--162},
  publisher    = {{IEEE}},
  year         = {2013},
  url          = {https://doi.org/10.1109/ESSDERC.2013.6818843},
  doi          = {10.1109/ESSDERC.2013.6818843},
  timestamp    = {Wed, 05 May 2021 08:50:07 +0200},
  biburl       = {https://dblp.org/rec/conf/essderc/JangBYMKCRDM13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}