BibTeX record conf/esscirc/ClercAGGR12

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@inproceedings{DBLP:conf/esscirc/ClercAGGR12,
  author       = {Sylvain Clerc and
                  Fady Abouzeid and
                  Gilles Gasiot and
                  David Gauthier and
                  Philippe Roche},
  title        = {A 65nm {SRAM} achieving 250mV retention and 350mV, 1MHz, 55fJ/bit
                  access energy, with bit-interleaved radiation Soft Error tolerance},
  booktitle    = {Proceedings of the 38th European Solid-State Circuit conference, {ESSCIRC}
                  2012, Bordeaux, France, September 17-21, 2012},
  pages        = {313--316},
  publisher    = {{IEEE}},
  year         = {2012},
  url          = {https://doi.org/10.1109/ESSCIRC.2012.6341317},
  doi          = {10.1109/ESSCIRC.2012.6341317},
  timestamp    = {Sat, 09 Apr 2022 12:39:17 +0200},
  biburl       = {https://dblp.org/rec/conf/esscirc/ClercAGGR12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}