BibTeX record conf/drc/GaoJXWHW18

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@inproceedings{DBLP:conf/drc/GaoJXWHW18,
  author       = {J. Gao and
                  Y. Jin and
                  B. Xie and
                  C. P. Wen and
                  Y. Hao and
                  M. Wang},
  title        = {GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing
                  Self-Terminated, Low Damage Anode Recessing Technology},
  booktitle    = {76th Device Research Conference, {DRC} 2018, Santa Barbara, CA, USA,
                  June 24-27, 2018},
  pages        = {1--2},
  publisher    = {{IEEE}},
  year         = {2018},
  url          = {https://doi.org/10.1109/DRC.2018.8442184},
  doi          = {10.1109/DRC.2018.8442184},
  timestamp    = {Mon, 09 Aug 2021 01:32:18 +0200},
  biburl       = {https://dblp.org/rec/conf/drc/GaoJXWHW18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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